JPH0361359B2 - - Google Patents

Info

Publication number
JPH0361359B2
JPH0361359B2 JP57117765A JP11776582A JPH0361359B2 JP H0361359 B2 JPH0361359 B2 JP H0361359B2 JP 57117765 A JP57117765 A JP 57117765A JP 11776582 A JP11776582 A JP 11776582A JP H0361359 B2 JPH0361359 B2 JP H0361359B2
Authority
JP
Japan
Prior art keywords
weight
conductor
wiring board
wiring
multilayer wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57117765A
Other languages
English (en)
Japanese (ja)
Other versions
JPS599992A (ja
Inventor
Hiromi Tozaki
Heikichi Tanei
Takanobu Noro
Akira Ikegami
Nobuyuki Sugishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57117765A priority Critical patent/JPS599992A/ja
Priority to US06/511,482 priority patent/US4547625A/en
Publication of JPS599992A publication Critical patent/JPS599992A/ja
Publication of JPH0361359B2 publication Critical patent/JPH0361359B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
    • C03C3/108—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Compositions Of Oxide Ceramics (AREA)
JP57117765A 1982-07-08 1982-07-08 多層配線基板の製造方法 Granted JPS599992A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57117765A JPS599992A (ja) 1982-07-08 1982-07-08 多層配線基板の製造方法
US06/511,482 US4547625A (en) 1982-07-08 1983-07-07 Glass multilayer wiring board and method for its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57117765A JPS599992A (ja) 1982-07-08 1982-07-08 多層配線基板の製造方法

Publications (2)

Publication Number Publication Date
JPS599992A JPS599992A (ja) 1984-01-19
JPH0361359B2 true JPH0361359B2 (en]) 1991-09-19

Family

ID=14719764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57117765A Granted JPS599992A (ja) 1982-07-08 1982-07-08 多層配線基板の製造方法

Country Status (2)

Country Link
US (1) US4547625A (en])
JP (1) JPS599992A (en])

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5911700A (ja) * 1982-07-12 1984-01-21 株式会社日立製作所 セラミツク多層配線回路板
JPS60235744A (ja) * 1984-05-04 1985-11-22 Asahi Glass Co Ltd セラミック基板用組成物
JPS60254697A (ja) * 1984-05-31 1985-12-16 富士通株式会社 多層セラミック回路基板および製法
FR2566386A1 (fr) * 1984-06-22 1985-12-27 Labo Electronique Physique Melange de depart pour une composition isolante comprenant un verre au plomb, encre serigraphiable comportant un tel melange et utilisation de cette encre pour la protection de microcircuits hybrides sur substrat ceramique
JPS61163696A (ja) * 1985-01-11 1986-07-24 日本特殊陶業株式会社 多層回路基板
US4593006A (en) * 1985-04-11 1986-06-03 Asahi Glass Company, Ltd. Composition for multilayer printed wiring board
JPS61270897A (ja) * 1985-05-25 1986-12-01 株式会社住友金属セラミックス 多層回路基板
US4627160A (en) * 1985-08-02 1986-12-09 International Business Machines Corporation Method for removal of carbonaceous residues from ceramic structures having internal metallurgy
JPH0634452B2 (ja) * 1985-08-05 1994-05-02 株式会社日立製作所 セラミツクス回路基板
JPS6247198A (ja) * 1985-08-27 1987-02-28 松下電工株式会社 多層配線基板
US4746557A (en) * 1985-12-09 1988-05-24 Murata Manufacturing Co., Ltd. LC composite component
JPS62173797A (ja) * 1986-01-27 1987-07-30 松下電器産業株式会社 セラミック多層配線基板
JPS62226839A (ja) * 1986-03-27 1987-10-05 Nippon Sheet Glass Co Ltd 低誘電率ガラス繊維
JPS62287658A (ja) * 1986-06-06 1987-12-14 Hitachi Ltd セラミックス多層回路板
JPH0797703B2 (ja) * 1986-09-04 1995-10-18 松下電器産業株式会社 セラミツク多層基板
US4820524A (en) * 1987-02-20 1989-04-11 Mcneilab, Inc. Gelatin coated caplets and process for making same
JPS63215559A (ja) * 1987-02-27 1988-09-08 日本碍子株式会社 セラミツク基板
US4778549A (en) * 1987-04-13 1988-10-18 Corning Glass Works Catalysts for accelerating burnout or organic materials
JPS6435990A (en) * 1987-07-30 1989-02-07 Nec Corp Multilayered ceramic wiring board
US4788046A (en) * 1987-08-13 1988-11-29 Ceramics Process Systems Corporation Method for producing materials for co-sintering
US5070047A (en) * 1988-07-19 1991-12-03 Ferro Corporation Dielectric compositions
US5120579A (en) * 1988-07-19 1992-06-09 Ferro Corporation Dielectric compositions
US5258335A (en) * 1988-10-14 1993-11-02 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5164342A (en) * 1988-10-14 1992-11-17 Ferro Corporation Low dielectric, low temperature fired glass ceramics
US5188886A (en) * 1988-10-14 1993-02-23 Raychem Corporation Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
US4985376A (en) * 1989-01-31 1991-01-15 Asahi Glass Company, Ltd. Conductive paste compositions and ceramic substrates
US5066620A (en) * 1989-01-31 1991-11-19 Asahi Glass Company Ltd. Conductive paste compositions and ceramic substrates
US5071794A (en) * 1989-08-04 1991-12-10 Ferro Corporation Porous dielectric compositions
US5245136A (en) * 1989-10-06 1993-09-14 International Business Machines Corporation Hermetic package for an electronic device
US5024975A (en) * 1989-10-19 1991-06-18 E. I. Du Pont De Nemours And Co., Inc. Crystallizable, low dielectric constant, low dielectric loss composition
US5071793A (en) * 1990-08-23 1991-12-10 Aluminum Company Of America Low dielectric inorganic composition for multilayer ceramic package
US5079194A (en) * 1990-10-11 1992-01-07 Aluminum Company Of America Crystal growth inhibitor for glassy low dielectric inorganic composition
US5118643A (en) * 1990-10-25 1992-06-02 Aluminum Company Of America Low dielectric inorganic composition for multilayer ceramic package containing titanium silicate glass
US5283104A (en) * 1991-03-20 1994-02-01 International Business Machines Corporation Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates
JPH04314394A (ja) * 1991-04-12 1992-11-05 Fujitsu Ltd ガラスセラミック回路基板とその製造方法
JPH0723252B2 (ja) * 1991-07-31 1995-03-15 日本電気株式会社 低温焼結性低誘電率無機組成物
US5242867A (en) * 1992-03-04 1993-09-07 Industrial Technology Research Institute Composition for making multilayer ceramic substrates and dielectric materials with low firing temperature
US5728470A (en) * 1994-05-13 1998-03-17 Nec Corporation Multi-layer wiring substrate, and process for producing the same
US5985473A (en) * 1997-11-17 1999-11-16 Cooper Automotive Products, Inc. Low-temperature barium/lead-free glaze for alumina ceramics
JP4650794B2 (ja) * 2005-07-01 2011-03-16 昭栄化学工業株式会社 積層電子部品用導体ペーストおよびそれを用いた積層電子部品
JP2016219683A (ja) * 2015-05-25 2016-12-22 ソニー株式会社 配線基板、および製造方法
JP7576091B2 (ja) * 2020-06-10 2024-10-30 日本板硝子株式会社 ガラス組成物、ガラスフィラーとその製造方法、及びガラスフィラーを含む樹脂組成物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808042A (en) * 1970-06-05 1974-04-30 Owens Illinois Inc Multilayer dielectric
US3998667A (en) * 1974-12-20 1976-12-21 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping
US4301324A (en) * 1978-02-06 1981-11-17 International Business Machines Corporation Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper
JPS5563900A (en) * 1978-11-08 1980-05-14 Fujitsu Ltd Multilyaer ceramic circuit board
US4221047A (en) * 1979-03-23 1980-09-09 International Business Machines Corporation Multilayered glass-ceramic substrate for mounting of semiconductor device
JPS576257A (en) * 1980-06-10 1982-01-13 Matsushita Electric Ind Co Ltd Water heater by solar heat
US4378481A (en) * 1981-03-02 1983-03-29 United Technologies Corporation Backers having glass particulates for electron beam hole drilling
JPS57184296A (en) * 1981-05-09 1982-11-12 Hitachi Ltd Ceramic circuit board
JPS5817651A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd 多層回路板とその製造方法
JPS5860666A (ja) * 1981-10-06 1983-04-11 旭硝子株式会社 緻密質の溶融石英ガラス焼結体の製造方法

Also Published As

Publication number Publication date
JPS599992A (ja) 1984-01-19
US4547625A (en) 1985-10-15

Similar Documents

Publication Publication Date Title
JPH0361359B2 (en])
JPH0343786B2 (en])
JPH0249550B2 (en])
JPS6244879B2 (en])
JPH0992983A (ja) セラミック多層基板の製造方法
JP3331083B2 (ja) 低温焼成セラミック回路基板
JPH025315B2 (en])
JPH0569319B2 (en])
JPS59178752A (ja) 多層配線基板
JP3093601B2 (ja) セラミック回路基板
KR100744855B1 (ko) 높은 열적 사이클 전도체 시스템
JPH0226798B2 (en])
JP2872273B2 (ja) セラミツク基板材料
JPS63292504A (ja) 導体ペ−スト
JP3047985B2 (ja) 多層セラミック配線基板の製造方法
JPH057343B2 (en])
JPH01166599A (ja) 積層セラミック基板の製造方法
JPH0250638B2 (en])
JP3076214B2 (ja) 低温焼成セラミック多層回路基板
JPH06243716A (ja) 銅ペースト
JPS63293899A (ja) 多層配線板
JPH0530317B2 (en])
JPS6112091A (ja) 多層回路基板及びその製造方法
JPH1065336A (ja) 低温焼成ガラスセラミックス多層配線基板とその製造方法
JP2007288070A (ja) 配線基板および配線基板の製造方法